X-ray diffraction study of AlN/AlGaN short period superlattices

Date

2007-12-10

Authors

Temkin, H.
Holtz, Mark
Nikishin, S.
Chandolu, A

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Publisher

American Institute of Physics

Abstract

Short period superlattices of AlN/Al0.08Ga0.92N with the average AlN content over 60% have been investigated by high resolution x-ray diffraction. The a and c lattice constants verify these structures to be strain relaxed. Monolayer-level interface roughness, caused by the presence of threading dislocations and step-flow growth mode, is simulated and directly compared with the zeroth and ±1 satellite peak positions of the rocking curves. It was found that the observed x-ray diffraction data can be adequately described by considering primarily the presence of screw dislocations and step-flow growth mode.

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