X-ray diffraction study of AlN/AlGaN short period superlattices
Date
2007-12-10
Authors
Temkin, H.
Holtz, Mark
Nikishin, S.
Chandolu, A
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Abstract
Short period superlattices of AlN/Al0.08Ga0.92N with the average AlN content over 60% have been investigated by high resolution x-ray diffraction. The a and c lattice constants verify these structures to be strain relaxed. Monolayer-level interface roughness, caused by the presence of threading dislocations and step-flow growth mode, is simulated and directly compared with the zeroth and ±1 satellite peak positions of the rocking curves. It was found that the observed x-ray diffraction data can be adequately described by considering primarily the presence of screw dislocations and step-flow growth mode.