Plasma characterization of thin film deposition systems

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1994-12

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Abstract

This thesis deals with the characterization of the plasmas present within the thin film deposition devices at Texas Tech University. Plasma diagnostics utilized include optical emission spectroscopy and a single probe design Langmuir probe. The spectrometer used for this work is an Optical Multichannel Analyzer, (OMA), manufactured by EG&G Instruments. There are two deposition systems at this facility: a linear system and a toroidal system. These systems utilize electron cyclotron resonance (ECR) to create and heat the deposition plasma. The plasma characterization was done by quantitative and qualitative means. Argon, methane, and diethylsilane plasmas were studied. Argon data is the most complete for both systems. The toroidal system ran an argon plasma, and the linear system ran all three gases. Quantitative calculations were made based on the spectra and the electron temperature, a lower limit for the electron temperature, and some relative densities were calculated. The spectra was also examined qualitatively to determine the existence of various ions and atoms in different ionization states.

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Keywords

Plasma-enhanced chemical vapor deposition, Plasma spectroscopy, Plasma devices

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