1.54 Micrometer Emitters Based on Erbium Doped InGaN P-I-N Junctions

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1.54 Micrometer Emitters Based on Erbium Doped InGaN P-I-N Junctions

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Title: 1.54 Micrometer Emitters Based on Erbium Doped InGaN P-I-N Junctions
Author: Zavada, J. M.; Jiang, H. X.; Lin, J. Y.; Ugolini, C.; Dahal, R.
URI: http://hdl.handle.net/2346/22870
Date: 2010

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