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dc.contributor.authorTemkin, H.en_US
dc.contributor.authorHoltz, M.en_US
dc.contributor.authorAhmad, I.en_US
dc.contributor.authorKipshidze, G.en_US
dc.contributor.authorBorisov, B.en_US
dc.contributor.authorChandolu, A.en_US
dc.contributor.authorKuryatkov, V.en_US
dc.contributor.authorNikishin, S.en_US
dc.date.accessioned2010-11-11T21:29:33Zen_US
dc.date.accessioned2012-05-13T17:54:45Z
dc.date.available2010-11-11T21:29:33Zen_US
dc.date.available2012-05-13T17:54:45Z
dc.date.issued2003-11-15en_US
dc.identifier.citationDeep Ultraviolet Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGa(In)NSergey A. Nikishin, Vladimir V. Kuryatkov, Anilkumar Chandolu, Boris A. Borisov, Gela D. Kipshidze, Iftikhor Ahmad, Mark Holtz and Henryk Temkin Jpn. J. Appl. Phys. 42 (2003) L1362en
dc.identifier.urihttp://hdl.handle.net/2346/2098en_US
dc.description.abstractWe report a systematic study of the optical properties of superlattices of AlN/Al0:08Ga0:92(In)N with periods in the range of 1.25–2.25 nm. The superlattices were grown on sapphire substrates using gas source molecular beam epitaxy with ammonia. Effective bandgaps between 4.5 eV (276 nm) and 5.3 eV (234 nm), as determined by optical reflectivity measurements, were obtained by adjusting the barrier and well thickness. These superlattices can be doped n- and p-type. We demonstrate double heterostructure light emitting diodes operating at wavelengths as short as 262 2 nm.en
dc.language.isoen_USen
dc.publisherThe Japan Society of Applied Physicsen
dc.relation.ispartofseries42;en_US
dc.titleDeep Ultraviolet Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGa(In)Nen
dc.typeArticleen
ttu.departmentNano Tech Center (NTC)en
ttu.emailSergey.Nikishin@coe.ttu.eduen


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