Electrical properties of fluorinated amorphous carbon films
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We have studied the capacitance–voltage (C–V), conductance–voltage (G–V), and current– voltage characteristics of fluorinated amorphous carbon (a-C:Fx) films using metal/a-C:Fx /Si and metal/a-C:Fx /metal structures, respectively. Samples annealed in a vacuum were also studied. The C–V curves of the as-deposited sample are stretched about the voltage axis. Interface state density of 4.131011 cm22 eV21 at the midgap was calculated. Annealing the sample deposited on Si in a vacuum caused more frequency dispersion in the C–V and G–V curves, probably due to the diffusion of carbon into silicon. The bulk density of states for samples deposited on metal, measured by space-charge-limited current technique, decreased from 431018 eV21 cm23 for the as-deposited sample, to 731017 eV21 cm23 for the annealed sample.