Digital Alloys of AlN/AlGaN for Deep UV Light Emitting Diodes

Date

2005-10-11

Authors

Temkin, H.
Holtz, Mark
Nikishin, S.

Journal Title

Journal ISSN

Volume Title

Publisher

The Japan Society of Applied Physics

Abstract

We report a systematic study of the optical and electrical properties of deep ultraviolet light emitting diodes based on digital alloy structures of AlN/Al0:08Ga0:92N grown by gas source molecular beam epitaxy with ammonia. Digital alloys are formed by short period superlattices consisting of Al0:08Ga0:92N wells, 0.50 or 0.75 nm thick, and AlN barriers, 0.75 to 1.5 nm thick. For digital alloys with effective bandgap of 5.1 eV, average AlN composition 72%, we obtain room temperature electron concentrations up to 1 1019 cm 3 and resistivity of 0.005 cm and hole concentrations of 1 1018 cm 3 with resistivity of 6 cm. Light emitting diodes based on digital alloys are demonstrated operating in the range of 250 to 290 nm

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Citation

Digital Alloys of AlN/AlGaN for Deep UV Light Emitting DiodesJpn. J. Appl. Phys. 44 (2005) 7221

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