247 nm solar-blind ultraviolet p-i-n photodetector

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247 nm solar-blind ultraviolet p-i-n photodetector

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Title: 247 nm solar-blind ultraviolet p-i-n photodetector
Author: Holtz, Mark; Song, D.Y.; Sokolovskii, G.; Kuchinskii, V.; Asomoza, R.; Kudryavtsev, Yu.; Nikishin, S.; Borisov, B.A.; Kuryatkov, V.
Abstract: We describe solar-blind p-i-n photodetectors based on short period superlattices of AlN/Al0.08Ga0.92N. The devices are grown using gas source molecular beam epitaxy with ammonia on transparent sapphire substrates. The cutoff wavelength for the device is 247 nm. For diodes with 150 m diameter mesas and sidewall surfaces passivated in oxygen plasma, we obtain extremely low dark leakage current of 3 pA/cm2 and high zero-bias resistance of 6 1014 . At 10 V reverse bias the observed responsivity is 62 mA/W.
URI: http://hdl.handle.net/2346/2043
Date: 2006-11-06

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