Enhanced luminescence from AlxGa._xN/AlyGa ._yN quantum wells grown by gas source molecular beam epitaxy with ammonia
MetadataShow full item record
We report the structural and optical properties of AlxGaJ.xN/AlyGal_yN quantum wells (QWs) structures grown by gas source molecular beam epitaxy with ammonia on sapphire (0001) substrates. QWs structures consist of five pairs of AlyGal_yN, O.3<y<0.45, wells (nominally 2-4 nm thick) and AlxGa]_xN, O.55<x<1, barriers (nominally 5 nm thick). All the structures were completed with a 10 run thick cap layer of AIN. We observed a significant enhancement in the cathodoluminescence intensities and longer photoluminescence lifetimes for OW structures grown in the 3D mode, as confirmed by spotty reflection high energy electron diffraction patterns. These effects are attributed to the formation of AlGaN quantum dots in the well materials.
Showing items related by title, author, creator and subject.
Wagenseller, Eugene (Texas Tech University, 1996-05)A novel class of reactions is investigated using ab initio methodology. This class of reactions was first defined by Lemal as pseudopericyclic. However, due to ambiguities with his original model the concept remained ...
Cui, Cong (2011-08)This thesis is a review of the quantum logic approach to quantum probability theory which was first studied by Birkhoff and von Neumann in 1936. Our study is based on the more general quantum structure which is known as ...
Brandon, Drew T. (2013-12)Studies of "intermediate" systems like Ar3; exhibit both classical and quantum behaviors. However, a full dynamical elucidation requires accurate quantum mechanical computational methods. This work presents a comprehensive ...