Now showing items 1-20 of 70

  • 247 nm solar-blind ultraviolet p-i-n photodetector 

    Holtz, Mark; Song, D.Y.; Sokolovskii, G.; Kuchinskii, V.; Asomoza, R.; Kudryavtsev, Yu.; Nikishin, S.; Borisov, B.A.; Kuryatkov, V. (American Institute of Physics, 2006-11-06)
    We describe solar-blind p-i-n photodetectors based on short period superlattices of AlN/Al0.08Ga0.92N. The devices are grown using gas source molecular beam epitaxy with ammonia on transparent sapphire substrates. The ...
  • AlGaInN-based ultraviolet light-emitting diodes grown on Si 111 

    Temkin, H.; Nikishin, S.; Holtz, M.; Borisov, B.; Kuryatkov, V.; Kipshidze, G. (American Institute of Physics, 2002-05-20)
    Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type ...
  • AlNÕAlGaInN superlattice light-emitting diodes at 280 nm 

    Temkin, H.; Nikishin, S.; Holtz, M.; Borisov, B.; Zhu, K.; Kuryatkov, V.; Kipshidze, G. (American Institute of Physics, 2003-02-01)
    Ultraviolet light-emitting diodes operating at 280 nm, grown by gas source molecular-beam epitaxy with ammonia, are described. The device is composed of n- and p-type superlattices of AlN~1.2 nm thick!/AlGaInN~0.5 nm thick! ...
  • Analysis of nonselective plasma etching of AlGaN by CF4/Ar/Cl2 

    Holtz, Mark; Menon, L.; Patibandla, S.; Temkin, H.; Nikishin, A.; Saxema, J.; Borisov, B.; Kuryatkov, V. (American Institute of Physics, 2005-03-21)
    We report the nonselective plasma etching of epitaxial GaN:Mg, Al0.63Ga0.37N, and AlN/Al0.08Ga0.92N short-period superlattices with various doping properties. Etching is performed using mixed CF4 /Ar feed gases in a combined ...
  • Control of Center Wavelength in Reflective-ArrayedWaveguide-Grating Multiplexers 

    Temkin, H.; Berg, J.; Gorbounov, V.; Bernussi, Ayrton; Grave de Peralta, Luis (Institute of Electronics and Electrical Engineers, 2004-12)
    A new approach to compensate for the channel-wavelength shift due to fabrication errors and thermal effects in arrayed waveguide-grating multiplexers is described. The method combines a silica-based reflective multiplexer ...
  • Controlled growth of GaN nanowires by pulsed metalorganic chemical 

    Temkin, H.; Holtz, Mark; Aurongzeb, D.; Ahmad, I.; Kuryatkov, V.; Yon, J.; Chandolu, A.; Yavich, B.; Kipshidze, G. (American Institute of Physics, 2005-01-11)
    Controlled and reproducible growth of GaN nanowires is demonstrated by pulsed low-pressure metalorganic chemical vapor deposition. Using self-assembled Ni nanodots as nucleation sites on s0001d sapphire substrates we obtain ...
  • Decay of zone-center phonons in AlN with A1, E1, and E2 symmetries 

    Holtz, Mark; Song, D.Y.; Pandit, P. (American Institute of Physics, 2007-12-06)
    Raman studies are reported for the A1 TO , E1 TO , E2 2, and A1 LO symmetry phonons of AlN from 20 to 375 K. By applying anharmonic decay theory to the observed temperature dependences of the phonon energies and linewidths, ...
  • Decay of zone-center phonons in GaN with A1, E1, and E2 symmetries 

    Dmitriev, V.; Usikov, A.; Soukhoveev, V.; Holtz, M.; Nikishin, S.A.; Song, D.Y. (American Institute of Physics, 2007-03-15)
    We report Raman studies of the A1 TO , E1 TO , E2 2, A1 LO , and E1 LO symmetry phonons of GaN from 20 to 325 K. By applying anharmonic decay theory to the observed temperature dependences of the phonon energies and ...
  • Deep Ultraviolet AlGaInN-Based Light-Emitting Diodes 

    Temkin, H.; Chu, S.; Holtz, M.; Nikishin, S.; Borisov, B.; Kuryatkov, V.; Kipshidze, G. (Wiley, 2002)
    Ultraviolet light-emitting diodes (LEDs) with emission wavelength as short as 280 nm, grown by gas source molecular beam epitaxy with ammonia, are described. The typical multi-quantum well (MQW) structure LED consists of ...
  • Deep Ultraviolet Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGa(In)N 

    Temkin, H.; Holtz, M.; Ahmad, I.; Kipshidze, G.; Borisov, B.; Chandolu, A.; Kuryatkov, V.; Nikishin, S. (The Japan Society of Applied Physics, 2003-11-15)
    We report a systematic study of the optical properties of superlattices of AlN/Al0:08Ga0:92(In)N with periods in the range of 1.25–2.25 nm. The superlattices were grown on sapphire substrates using gas source molecular ...
  • Deep ultraviolet photodetectors grown by gas source molecular beam 

    Asomoza, R.; Kudryavtsev, Yu.; Dmitriev, V.; Vsikov, A.; Nikishin, S.; Borisov, B.; Song, D.Y.; Kuryatkov, V.; Holtz, M. (SPIE, 2006-10-13)
    Optically-based chemical and biological sensors require optoelectronic devices with specific emission and detection wavelength ranges. Semiconductor optoelectronic devices applicable to this sensing are of particular ...
  • Dependence of the stress–temperature coefficient on dislocation density 

    Temkin, H.; Faleev, N.; Holtz, Mark; Ahmad, I. (American Institute of Physics, 2004-02-15)
    We report measurements of stress in GaN epitaxial layers grown on 6H–SiC and a-Al2O3 substrates. Biaxial stresses span 11.0 GPa ~tensile! to 21.2 GPa ~compressive!. Stress determined from curvature measurements, obtained ...
  • Depth dependence of defect density and stress in GaN grown on SiC 

    Melnik, Yu.; Holtz, Mark; Ahmad, I.; Temkin, H.; Faleev, N. (American Institute of Physics, 2005-12-21)
    We report high resolution x-ray diffraction studies of the relaxation of elastic strain in GaN grown on SiC 0001 . The GaN layers were grown with thickness ranging from 0.29 to 30 m. High level of residual elastic strain ...
  • Determination of oscillator strength of C–F vibrations in fluorinated 

    West, M.; Strathman, M.; Gangopadhyey, S.; Temkin, H.; Harris, H.; Wang, X. (American Institute of Physics, 2001-05-01)
    Fluorinated amorphous-carbon (a-CFx) films deposited by plasma-enhanced chemical-vapor deposition were investigated by Fourier transform infrared transmission spectroscopy and Rutherford backscattering. The proportionality ...
  • DIELECTRIC FUNCTION OF AlN GROWN ON Si (111) BY MBE 

    Temkin, H.; Nikishin, S.; Wilson, S.; Gregory, R.; Konkar, A.; Zollner, Stefan (Materials Research Society, 2000)
    We measured the ellipsometric response from 0.7-5.4 eV of c-axis oriented AlN on Si (111) grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN the refractive index is about 5-10% ...
  • Diffusion process and formation of super-spin-glass state in soft magnetic Fe/Pt system. 

    Moon, Latika; Holtz, M.; Aurongzeb, D. (American Institute of Physics, 2006-08-28)
    We report results on surface and micromagnetic structures of Fe thin films consisting of a Pt underlayer. We use atomic force microscopy to study the surface structure evolution of the Fe films as a function of annealing ...
  • Digital Alloys of AlN/AlGaN for Deep UV Light Emitting Diodes 

    Temkin, H.; Holtz, Mark; Nikishin, S. (The Japan Society of Applied Physics, 2005-10-11)
    We report a systematic study of the optical and electrical properties of deep ultraviolet light emitting diodes based on digital alloy structures of AlN/Al0:08Ga0:92N grown by gas source molecular beam epitaxy with ammonia. ...
  • Direct space-to-time pulse shaper with reflective 

    Temkin, H.; Bernussi, A.A.; Kuryatkov, V.; Grave de Peralta, L.; Krishnan, A. (Optical Society of America, 2006-03-01)
    We demonstrate for what we believe to be the first time the generation of sequences of ultrafast optical pulses by phase modulation in a direct space-to-time pulse shaper. The pulse shaper is based on the combination of a ...
  • Effects of power truncation on the insertion loss and crosstalk 

    Temkin, H.; Frisbie, S.; Grave de Peralta, Luis; Bernussi, A. (American Institute of Physics, 2003-09)
    A measurement of the insertion loss and crosstalk in folded, 100 GHz, arrayed waveguide multiplexers as a function of the number of grating waveguides is described. The number of grating waveguides can be varied in a single ...
  • Electric Field Distribution in a Grating of a Folded 

    Temkin, H.; Grave de Peralta, L.; Bernussi, A. (Institute of Electronics and Electrical Engineers, 2004-02)
    We present direct measurements of the electric field distribution at the reflecting surface folding a grating of an arrayed-waveguide multiplexer. The field distribution obtained using different input channels of a device ...