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Abstract:
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Timely identification of causes for low quality of devices is a primary key to the profit of a semiconductor industry. There are various methods to aid the identification and rectification of defects arising from the wafer manufacturing process. Parametric data analysis is a key method to extract process related information about the wafers. Parameters like idrives, leakage currents, threshold voltages, oxide thickness, critical dimension measurements provide a wealth of details about the manufactured wafers. This thesis aims at addressing the root cause of the problem of low quality of Deep Ultra Violet data buffers after an analysis of process parameters. On finding the cause, a solution to achieving a required quality level is suggested and verified. |