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  • Initial growth of interfacial oxide during deposition of HfO2 on silicon 

    White, M.; Xie, L.; Gangopadhyay, S.; Harris, H.; Temkin, H.; Choi, K. (American Institute of Physics, 2004-07-12)
    Interfacial chemistry of Hf/ Si, HfO2 /SiO2 / Si, and HfO2 /Si is investigated by x-ray photoelectron spectroscopy in order to understand the interfacial layer formation mechanism. Deposition of Hf and HfO2 films was carried ...