Electron paramagnetic resonance of amorphous silicon nitride

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Title: Electron paramagnetic resonance of amorphous silicon nitride
Author: Smith, William David
Abstract: The increasing use of hydrogenated amorphous silicon and its alloys has been a boon to the optoelectronics industry . The most attractive aspects of these amorphous materials are their ability to be deposited over large areas at relatively low substrate temperatures . By alloying , films can be produced with a wide range of bandgaps . These features , and many others , have led to an intense study of amorphous silicon films and their many applications . The applications of hydrogenated amorphous silicon - silicon nitride (a -Si :H /a -SiNx :H ) have become as far ranging as the methods used to study thenL Thin film transistors (TFTs ) made using these films have such diverse applications as the switching elements in active matrix , liquid crystal flat panel displays [1] , in printing and document scanning [2] and logic devices [3] . Silicon nitride films deposited using plasma enhanced chemical vapor deposition (PECVD ) have been shown to be ideal as the insulating layer in metal -insulator -silicon solar cells [4] . Other uses include the gate dielectrics in metal -oxide -semiconductor (MOS ) power transistors , and as the charge storage layer in metal -nitride -oxide -semiconductor (MNOS ) non -volatile memory devices [5] .
URI: http : / /hdl .handle .net /2346 /9819
Date: 1996-05


Smith, William David Electron paramagnetic resonance of amorphous silicon nitride. Master's thesis, Texas Tech University. Available electronically from http : / /hdl .handle .net /2346 /9819 .

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