Light interstitials and their interactions in semiconductors

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Title: Light interstitials and their interactions in semiconductors
Author: Roberson, Mark A.
Abstract: As device sizes have decreased , the effect of localized defects on semiconductor performance has increased . Many point defects are electrically active and can therefore directly affect the charge carrier concentrations and lifetimes of devices . This makes understanding the behavior of these defects important . This dissertation involves theoretical work on localized defects (impurities and intrinsic defects ) in the elemental and compound semiconductors C , 5f , -BP , AlP . , SiC , and BN . The theoretical level is approximate HF , ab -initio Hartree -Fock (HF ) , and post -HF treatments in electron correlation . The host crystals are modeled with molecular clusters .
URI: http : / /hdl .handle .net /2346 /8428
Date: 1993-12

Citation

Light interstitials and their interactions in semiconductors. Doctoral dissertation, Texas Tech University. Available electronically from http : / /hdl .handle .net /2346 /8428 .

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