Oxygen thermal donor formation in Cz-silicon

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Title: Oxygen thermal donor formation in Cz-silicon
Author: Jones, Bobby Dale
Abstract: Deep level transient spectroscopy has been used to study the kinetics of oxygen in Czochralski (CZ ) grown silicon as a function of annealing time at 450°C . Specifically , the concentrations of the E^ - 0 .15 eV and the E^ - 0 .07 eV thermal donors have been analyzed . Changes in the energy levels of the thermal donors as a function of anneal time has also been observed . This may be due to previously unknown formative abilities of the thermal donor complex as oxygen atoms accrete to the thermal donor core . Investigations also reveal that these two thermal donors' concentrations grow at different rates . AIso , the concentration of the E (0 .15 ) thermal donor is consistently greater than or equal to the concentration of the E (0 .07 ) thermal donor . However , total thermal donor concentrations are still consistent with previous data obtained by C -V me as ureme nt s .
URI: http : / /hdl .handle .net /2346 /17302
Date: 1990-12

Citation

Oxygen thermal donor formation in Cz-silicon. Master's thesis, Texas Tech University. Available electronically from http : / /hdl .handle .net /2346 /17302 .

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