X-ray study of III-Nitride epitaxial layers

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dc.contributor.committeeChair Nikishin , Sergey
dc.degree.department Electrical and Computer Engineering
dc.degree.discipline Electrical and Computer Engineering
dc.degree.grantor Texas Tech University
dc.degree.level Masters
dc.degree.name Master of Science in Electrical Engineering
dc.rights.availability Unrestricted .
dc.creator Akula , Aditya K
dc.date.accessioned 2014 -06 -06T20 :17 :37Z
dc.date.available 2012 -06 -01T15 :42 :20Z
dc.date.available 2014 -06 -06T20 :17 :37Z
dc.date.issued 2007 -12
dc.identifier.uri http : / /hdl .handle .net /2346 /10646
dc.description.abstract Group III -Nitride semiconductors are currently under extensive investigation as promising materials for optoelectronic , high -temperature , and high -power devices due to properties such as large direct band gap , high thermal stability , and strong inter -atomic bonds . The performance of III -Nitride epitaxial devices depend heavily on their structural quality . Thin epitaxial semiconducting films usually contain high density of structural defects and a high degree of mosaicity ; the III -Nitrides in particular have these properties due to the lack of a natural substrate . In this thesis we study the mosaic nature of III -Nitride epitaxial layers and their characteristics like tilt angle , twist angle , interdependence factor (m ) . We also discuss methods to accurately determine the density of edge and screw dislocations in an epitaxial film . In the latter part of the thesis we show the effect various growth parameters have on the structural and electrical properties of GaN : Mg , grown by MOCVD . The data for the study of GaN :Mg epitaxial layers was obtained using a high resolution X -ray diffractometer (XRD ) . Methods discussed earlier in the thesis were employed on the data to analyze critical structural information of the thin GaN films , with an ultimate aim of improving their electrical , structural , thermal and optical properties .
dc.format.mimetype application /pdf
dc.language.iso eng
dc.subject X -ray Diffraction
dc.subject GaN
dc.subject Epitaxial Films
dc.subject III -Nitride
dc.title X -ray study of III -Nitride epitaxial layers
dc.type Thesis

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X-ray study of III-Nitride epitaxial layers. Master's thesis, Texas Tech University. Available electronically from http : / /hdl .handle .net /2346 /10646 .

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