|
Abstract:
|
The significance of the radioxenon memory effect in the context of the International Monitoring System of the Comprehensive Nuclear -Test -Ban Treaty is introduced as motivation for the project . Existing work regarding xenon memory effect reduction and thin film diffusion barriers is surveyed . Experimental techniques for radioxenon production and exposure , as well as for thin film deposition on plastic by plasma enhanced chemical vapor deposition (PECVD ) , are detailed . A deposition rate of 76 .5 nm min⁻¹ of SiO₂ is measured for specific PECVD parameters . Relative activity calculations show agreement within 5 % between identically exposed samples counted on parallel detectors . Memory effect reductions of up to 59±1 .8 % for 900 nm SiO₂ films produced by plasma enhanced chemical vapor deposition and of up to 77±3 .7 % for 50 nm Al₂O₃ films produced by atomic layer deposition are shown . Future work is suggested for production of more effective diffusion barriers and expansion to testing in operational monitoring stations . |