Developing and implementing a Raman NSOM for the characterization of semiconductor materials

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Title: Developing and implementing a Raman NSOM for the characterization of semiconductor materials
Author: Furst-Pikus, Greyhm Matthew
Abstract: We have designed and constructed a novel Raman near -field scanning optical microscope (NSOM ) and evaluated its performance characteristics with the goal of characterizing the strain in nanoscopic silicon structures . The Raman NSOM was built around a commercial Raman microscope to which a custom built stage was added to provide precise control over the tip position above the sample (z ) using shear -force microscopy feedback as well as sample scanning in the x -y plane . The motion control axes were calibrated to better than 1 nm in z and approximately 20 nm in x and y . The NSOM provides both topographical images and Raman mapping with a lateral spectral resolution of 150 -300 nm . The experiments described herein were enabled by gold -coated chemically etched NSOM tips with aperture diameters ranging between 60 and 150 nm . The sensitivity of the instrument was demonstrated by the high signal -to -noise ratios observed for Raman scattering by diamond and silicon in reflection mode . Spatial resolution and spectral sensitivity were demonstrated by obtaining well -resolved tip -sample separation curves that provide an accurate estimate of tip aperture size during an experiment .
URI: http : / /hdl .handle .net /2152 /ETD -UT -2010 -05 -902
Date: 2010-09-30

Citation

Developing and implementing a Raman NSOM for the characterization of semiconductor materials. Doctoral dissertation, University of Texas at Austin. Available electronically from http : / /hdl .handle .net /2152 /ETD -UT -2010 -05 -902 .

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