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Abstract:
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The microelectronics industry strives for continued reduction in feature sizes to allow increased computing speed and power . This calls for continuous development of new materials . During the shift to 157 nm photolithography , it was discovered that fluorinated materials were necessary to provide sufficient transparency . Material design and synthesis to incorporate fluorine bearing norbornane based materials through an alternate means of polymerization to those used in traditional lithographic materials will be presented .
Step and Flash Imprint Lithography represents a low cost alternative to optical lithography for production of nanoscale features . Sub -20 nm features have been produced using commercial tools however the contact between the imprint template and resist formulation leaves the template prone to fouling . A new imprint resist designed to facilitate wafer reworking and template cleaning is presented .
The small amount of power available from deep ultraviolet light sources necessitates the use of systems that behave in a catalytic manner that is referred to as gain . The use of small molecules for gain necessitates a reliance on diffusion through the resist film and results in image bias . A polymeric material that undergoes depropagation catalyzed by a single photochemical event and causes a solubility change due to this event represents a system that possesses gain while removing diffusion bias . Progress towards such a system is presented . |