I-V transport measurements of a single unsupported MWCNT under various bending deformations

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Title: I-V transport measurements of a single unsupported MWCNT under various bending deformations
Author: Kim, Suenne
Abstract: The first part of this dissertation is an introduction describing a brief historical background of carbon nanotubes (CNTs ) and their pseudo 1D structure responsible for many exotic electronic properties . The second part describes our experimental setup . The third part is about the growing of Multi -Walled Carbon Nanotubes (MWCNTs ) by the chemical vapor deposition (CVD ) method . Then the fourth part demonstrates a simple but reliable method to make firm contact junctions between MWCNTs and metals such as tungsten (W ) . The novel point of our method consists , after making a mechanical preliminary contact at a selected MWCNT , in applying a series of voltage pulses across the contact . Thin oxide layers that may form between the MWCNT and the W wire , are removed in steps by the resistive heating and electron impact during the application of each voltage pulse . Furthermore , this simple process of contact welding in steps does not bring about any permanent change in the electronic transport properties of the MWCNTs . The fifth part discusses our bending experiments . We apply a uniform and continuous bending to a selected MWCNT at room and liquid nitrogen temperatures to study the strain effect on the electrical transport in the MWCNT . There are a few published experimental works related to the bending deformation ; however , this is the first study of electronic transport properties in continuous bending and releasing deformations . We observed a saturation behavior with the MWCNT and also found the bending deformation causing an anomalous change in the saturation behavior . In the sixth part we depict some interesting phenomena due to the stretching deformation of MWCNT , where we were able to propose a simple model for electron localization induced by the deformation . The last part deals with the formation of the "X -junction" between two MWCNTs . A strong X -junction can be formed simply by means of the e -beam inside the Scanning Electron Microscope (SEM ) . The X -junctions may form the basic elements of nano -electronic circuits such as various metal -insulator junctions , quantum dots , and similar devices .
URI: http : / /hdl .handle .net /2152 /9706
Date: 2011-01-25

Citation

I-V transport measurements of a single unsupported MWCNT under various bending deformations. Doctoral dissertation, The University of Texas at Austin. Available electronically from http : / /hdl .handle .net /2152 /9706 .

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