Fundamental understanding of the physics and modeling of boron source/drain extension evolution during CMOS device fabrication

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Title: Fundamental understanding of the physics and modeling of boron source/drain extension evolution during CMOS device fabrication
Author: Kohli, Puneet
Abstract: Not available
URI: http : / /hdl .handle .net /2152 /708
Date: 2008-08-28

Citation

Fundamental understanding of the physics and modeling of boron source/drain extension evolution during CMOS device fabrication. Doctoral dissertation, The University of Texas at Austin. Available electronically from http : / /hdl .handle .net /2152 /708 .

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