Fabrication modeling and reliability of novel architecture and novel materials based MOSFET devices

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dc.contributor.advisor Banerjee , Sanjay en_US
dc.identifier.oclc 123363632 en_US
dc.creator Dey , Sagnik en_US
dc.date.accessioned 2008 -08 -28T23 :04 :24Z
dc.date.accessioned 2014 -02 -19T22 :31 :08Z
dc.date.available 2008 -08 -28T23 :04 :24Z
dc.date.available 2014 -02 -19T22 :31 :08Z
dc.date.created 2006 en_US
dc.date.issued 2008 -08 -28T23 :04 :24Z
dc.identifier.uri http : / /hdl .handle .net /2152 /2714
dc.description.abstract Not available en_US
dc.format.medium electronic en_US
dc.language.iso eng en_US
dc.rights Copyright © is held by the author . Presentation of this material on the Libraries' web site by University Libraries , The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works . en_US
dc.subject.lcsh Metal oxide semiconductor field -effect transistors - -Design and construction en_US
dc.subject.lcsh Metal oxide semiconductor field -effect transistors - -Materials en_US
dc.subject.lcsh Germanium compounds en_US
dc.subject.lcsh Silicon compounds en_US
dc.title Fabrication modeling and reliability of novel architecture and novel materials based MOSFET devices en_US
dc.description.department Electrical and Computer Engineering en_US
dc.identifier.recnum b65008200 en_US
dc.type.genre Thesis en_US
dc.type.material text en_US
thesis.degree.name Doctor of Philosophy en_US
thesis.degree.level Doctoral en_US
thesis.degree.discipline Electrical and Computer Engineering en_US
thesis.degree.grantor The University of Texas at Austin en_US
thesis.degree.department Electrical and Computer Engineering en_US

Citation

Fabrication modeling and reliability of novel architecture and novel materials based MOSFET devices. Doctoral dissertation, The University of Texas at Austin. Available electronically from http : / /hdl .handle .net /2152 /2714 .

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