A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes

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Title: A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes
Author: Kang, Changseok
Abstract: Not available
URI: http : / /hdl .handle .net /2152 /1153
Date: 2008-08-28

Citation

A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes. Doctoral dissertation, The University of Texas at Austin. Available electronically from http : / /hdl .handle .net /2152 /1153 .

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