Ultra-shallow junction formation : co-implantation and rapid thermal annealing

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dc.contributor.advisor Banerjee , Sanjay
dc.creator Li , Hong -jyh
dc.date.accessioned 2011 -05 -16T21 :14 :18Z
dc.date.accessioned 2011 -08 -16T15 :56 :31Z
dc.date.available 2011 -05 -16T21 :14 :18Z
dc.date.available 2011 -08 -16T15 :56 :31Z
dc.date.created 2002 -08
dc.date.issued 2011 -05 -16
dc.identifier.uri http : / /hdl .handle .net /2152 /11248
dc.description.abstract Not available en_US
dc.format.medium electronic
dc.language.iso eng en_US
dc.rights Copyright © is held by the author . Presentation of this material on the Libraries' web site by University Libraries , The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works .
dc.subject Boron compounds en_US
dc.subject Ion implantation en_US
dc.subject Diffusion - -Computer simulation en_US
dc.title Ultra -shallow junction formation : co -implantation and rapid thermal annealing en_US
dc.description.department Electrical and Computer Engineering en_US
dc.type.genre Thesis
dc.type.material text
thesis.degree.name Doctor of Philosophy en_US
thesis.degree.level Doctoral en_US
thesis.degree.discipline Electrical and Computer Engineering en_US
thesis.degree.grantor The University of Texas at Austin
thesis.degree.department Electrical and Computer Engineering en_US
dc.rights.restriction Restricted

Citation

Ultra-shallow junction formation : co-implantation and rapid thermal annealing. Doctoral dissertation, The University of Texas at Austin. Available electronically from http : / /hdl .handle .net /2152 /11248 .

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