Dynamic stability margin analysis on SRAM

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Title: Dynamic stability margin analysis on SRAM
Author: Ho, Yenpo
Abstract: In the past decade , aggressive scaling of transistor feature size has been a primary force driving higher Static Random Access Memory (SRAM ) integration density . Due to the scaling , nanometer SRAM designs are getting more and more stability issues . The traditional way of analyzing stability is the Static Noise Margins (SNM ) . However , SNM has limited capability to capture critical nonlinearity , so it becomes incapable of characterizing the key dynamics of SRAM operations with induced soft -error . This thesis defines new stability margin metrics using a system -theoretic approach . Nonlinear system theories will be applied rigorously in this work to construct new stability concepts . Based on the phase portrait analysis , soft -error can be explained using bifurcation theory . The state flipping requires a minimum noise current (Icritical ) and time (Tcritical ) . This work derives Icritical analytically for simple L1 model and provides design insight using a level one circuit model , and also provides numerical algorithms on both Icritical and Tcritial for higher a level device model . This stability analysis provides more physical characterization of SRAM noise tolerance property ; thus has potential to provide needed yield estimation .
URI: http : / /hdl .handle .net /1969 .1 /ETD -TAMU -2722
Date: 2009-05-15

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Dynamic stability margin analysis on SRAM. Available electronically from http : / /hdl .handle .net /1969 .1 /ETD -TAMU -2722 .

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