Zirconium-doped tantalum oxide high-k gate dielectric films

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dc.contributor.advisor Kuo , Yue en_US
dc.contributor.committeeMember Hall , Kenneth R . en_US
dc.creator Tewg , Jun -Yen en_US
dc.date.accessioned 2005 -02 -17T20 :59 :20Z
dc.date.accessioned 2014 -02 -19T18 :35 :21Z
dc.date.available 2005 -02 -17T20 :59 :20Z
dc.date.available 2014 -02 -19T18 :35 :21Z
dc.date.created 2004 -12 en_US
dc.date.issued 2005 -02 -17T20 :59 :20Z
dc.identifier.uri http : / /hdl .handle .net /1969 .1 /1346
dc.description.abstract A new high -k dielectric material , i .e . , zirconium -doped tantalum oxide (Zr -doped TaOx ) , in the form of a sputter -deposited thin film with a thickness range of 5 -100 nm , has been studied . Important applications of this new dielectric material include the gate dielectric layer for the next generation metal -oxide -semiconductor field effect transistor (MOSFET ) . Due to the aggressive device scaling in ultra -large -scale integrated circuitry (ULSI ) , the ultra -thin conventional gate oxide (SiO2 ) is unacceptable for many practical reasons . By replacing the SiO2 layer with a high dielectric constant material (high -k ) , many of the problems can be solved . In this study , a novel high -k dielectric thin film , i .e . , TaOx doped with Zr , was deposited and studied . The film ?s electrical , chemical , and structural properties were investigated experimentally . The Zr dopant concentration and the thermal treatment condition were studied with respect to gas composition , pressure , temperature , and annealing time . Interface layer formation and properties were studied with or without an inserted thin tantalum nitride (TaNx ) layer . The gate electrode material influence on the dielectric properties was also investigated . Four types of gate materials , i .e . , aluminum (Al ) , molybdenum (Mo ) , molybdenum nitride (MoN ) , and tungsten nitride (WN ) , were used in this study . The films were analyzed with ESCA , XRD , SIMS , and TEM . Films were made into MOS capacitors and characterized using I -V and C -V curves . Many promising results were obtained using this kind of high -k film . It is potentially applicable to future MOS devices . en_US
dc.format.extent 4352230 bytes
dc.format.medium electronic en_US
dc.format.mimetype application /pdf
dc.language.iso en _US en_US
dc.publisher Texas A &M University en_US
dc.subject high -k en_US
dc.title Zirconium -doped tantalum oxide high -k gate dielectric films en_US
dc.type Book en
dc.type.genre Electronic Dissertation en_US
dc.type.material text en_US
dc.format.digitalOrigin born digital en_US


Zirconium-doped tantalum oxide high-k gate dielectric films. Available electronically from http : / /hdl .handle .net /1969 .1 /1346 .

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