Zirconium-doped tantalum oxide high-k gate dielectric films

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Title: Zirconium-doped tantalum oxide high-k gate dielectric films
Author: Tewg, Jun-Yen
Abstract: A new high -k dielectric material , i .e . , zirconium -doped tantalum oxide (Zr -doped TaOx ) , in the form of a sputter -deposited thin film with a thickness range of 5 -100 nm , has been studied . Important applications of this new dielectric material include the gate dielectric layer for the next generation metal -oxide -semiconductor field effect transistor (MOSFET ) . Due to the aggressive device scaling in ultra -large -scale integrated circuitry (ULSI ) , the ultra -thin conventional gate oxide (SiO2 ) is unacceptable for many practical reasons . By replacing the SiO2 layer with a high dielectric constant material (high -k ) , many of the problems can be solved . In this study , a novel high -k dielectric thin film , i .e . , TaOx doped with Zr , was deposited and studied . The film ?s electrical , chemical , and structural properties were investigated experimentally . The Zr dopant concentration and the thermal treatment condition were studied with respect to gas composition , pressure , temperature , and annealing time . Interface layer formation and properties were studied with or without an inserted thin tantalum nitride (TaNx ) layer . The gate electrode material influence on the dielectric properties was also investigated . Four types of gate materials , i .e . , aluminum (Al ) , molybdenum (Mo ) , molybdenum nitride (MoN ) , and tungsten nitride (WN ) , were used in this study . The films were analyzed with ESCA , XRD , SIMS , and TEM . Films were made into MOS capacitors and characterized using I -V and C -V curves . Many promising results were obtained using this kind of high -k film . It is potentially applicable to future MOS devices .
URI: http : / /hdl .handle .net /1969 .1 /1346
Date: 2005-02-17

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Zirconium-doped tantalum oxide high-k gate dielectric films. Available electronically from http : / /hdl .handle .net /1969 .1 /1346 .

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