Fabrication Of A Silicon Single Electron Transistor

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Title: Fabrication Of A Silicon Single Electron Transistor
Author: Chinoy, Sharukh Roomy
Abstract: Single electronics has bright prospects because of its high scalability . The single electron transistor (SET ) which utilizes these principles could replace the current workhorse of the industry , the MOSFET . The SET is plagued with limitations such as , a low operating temperature , background charge issues , a low voltage gain and high output impedance . The current generation SET devices have overcome most of the aforementioned issues but use highly complicated fabrication techniques . Electron beam lithography was used to pattern device structures on silicon -on -insulator (SOI ) wafers with a hydrogen silsesquioxane (HSQ ) system being the resist . The silicon was then etched using HSQ as the mask in a deep reactive ion etcher with SF6 and O2 gasses . Experimentation was also carried out on other electron beam resists namely UVN30 and PMMA ; these were incompatible with my fabrication technique due to their resolution capability and etch resistance respectively .
URI: http : / /hdl .handle .net /10106 /600
Date: 2007-09-17


Fabrication Of A Silicon Single Electron Transistor. Available electronically from http : / /hdl .handle .net /10106 /600 .

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