An Ultra Wide Band CMOS Low Noise Amplifier Design

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Title: An Ultra Wide Band CMOS Low Noise Amplifier Design
Author: Bhadravati Mohankumar, Nahusha
Abstract: An RF ultra wide band low noise amplifier designed for the frequency range of 12 -18 GHz of operation is presented in this paper . The low noise amplifier is designed using the state -of -the -art complementary metal oxide semiconductor 45 nm technology . Berkeley's Predictive Technology Model (PTM ) is used to generate a fairly accurate mathematical model and the SPICE data is implemented into the BSIM 4 version of the Advanced Design Systems (ADS ) program . The low noise design strategy is mainly based on the analysis of high frequency CMOS operation . This LNA has two stages : the first stage is a RL feedback amplifier with an inductive load , and the second stage is a RC feedback amplifier with an inductive load . High frequency small signal MOSFET models with shunt -shunt feedback are used to determine the input impedance , output impedance and gain equations governing this circuit . Simulation results of this two stage feedback amplifier demonstrate a gain of 19 dB over a 6 GHz bandwidth , high linearity , and a low noise figure - less than 2 .4 dB . This is a low voltage high current amplifier which requires a supply voltage of simply 0 .5 V and has low power consumption ( ~13 .5 mW ) .
URI: http : / /hdl .handle .net /10106 /5396
Date: 2011-03-03

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An Ultra Wide Band CMOS Low Noise Amplifier Design. Available electronically from http : / /hdl .handle .net /10106 /5396 .

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