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Abstract:
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Dielectrically Isolated Bipolar Junction Transistors (DIBJTs ) are used in industry for high speed and high power applications . These devices suffer from thermal heating and are subjected to change in their characteristics . This thesis explores the thermal effects involving the self heating and inter -device heating (thermal coupling ) at the device as well as at the circuit level .
Systematic analysis of individual device heating characteristics in a particular Current feedback operational amplifier (CFOA ) design is carried out , using the VBIC (Vertical Bipolar Inter -company ) model in the the Cadence SpectreS simulator . A diagnostic and design procedure is established for circuit designers to determine the possible causes of the thermal tail and to eliminate the problem . To consider the inter -device heating effects , a BJT symbol including adjacent device heating in the VBIC model is developed at the schematic capture level .
Different test structures are developed , and fabricated using National Semiconductor process to study dependence of inter -device heating of DIBJTs on various layout factors . An innovative method for the inter -device heating measurement is developed using IC -CAP / HPIB interfaced evaluation system . |