Fabrication, Characterization And Hall Mobility Analysis Of MOS Devices With Low-k And High-k Dielectric Materials

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dc.contributor Agrawal , Rakshit en_US
dc.date.accessioned 2007 -08 -23T01 :56 :31Z
dc.date.accessioned 2011 -08 -24T21 :40 :18Z
dc.date.available 2007 -08 -23T01 :56 :31Z
dc.date.available 2011 -08 -24T21 :40 :18Z
dc.date.issued 2007 -08 -23T01 :56 :31Z
dc.date.submitted December 2006 en_US
dc.identifier.uri http : / /hdl .handle .net /10106 /341
dc.description.abstract Scaling of MOSFETS has led to leakage current problems in SiO2 dielectric based MOSFETS . This has led to the introduction of high -k dielectric materials which can afford greater physical thickness and achieve the same capacitance with lesser equivalent oxide thickness . But the high -k devices have certain limitations like channel mobility degradation . Mobility degradation in high -k MISFETS is discussed in this work using Hall measurements . The MOS devices were fabricated with SiO2 and HfSiO , on p -type silicon substrate . The fabrication process flow used for both type of MOS devices is explained . Characterization and analysis was performed for the determination of various parameters related to these devices like dielectric thickness . Hall mobility measurements were performed on the specially designed multi -drain Hall bars for different gate biases in low magnetic field regime . Higher Hall mobility was observed in the SiO2 based devices than HfSiO based devices . en_US
dc.language.iso EN en_US
dc.publisher Electrical Engineering en_US
dc.title Fabrication , Characterization And Hall Mobility Analysis Of MOS Devices With Low -k And High -k Dielectric Materials en_US
dc.type M .S . en_US

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Fabrication, Characterization And Hall Mobility Analysis Of MOS Devices With Low-k And High-k Dielectric Materials. Available electronically from http : / /hdl .handle .net /10106 /341 .

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