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Title:
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Fabrication, Characterization And Hall Mobility Analysis Of MOS Devices With Low-k And High-k Dielectric Materials |
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Author:
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Agrawal, Rakshit |
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Abstract:
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Scaling of MOSFETS has led to leakage current problems in SiO2 dielectric based MOSFETS . This has led to the introduction of high -k dielectric materials which can afford greater physical thickness and achieve the same capacitance with lesser equivalent oxide thickness . But the high -k devices have certain limitations like channel mobility degradation . Mobility degradation in high -k MISFETS is discussed in this work using Hall measurements .
The MOS devices were fabricated with SiO2 and HfSiO , on p -type silicon substrate . The fabrication process flow used for both type of MOS devices is explained . Characterization and analysis was performed for the determination of various parameters related to these devices like dielectric thickness . Hall mobility measurements were performed on the specially designed multi -drain Hall bars for different gate biases in low magnetic field regime . Higher Hall mobility was observed in the SiO2 based devices than HfSiO based devices . |
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URI:
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http : / /hdl .handle .net /10106 /341
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Date:
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2007-08-23 |